super fast recovery diode rfu20tm5s ? series ? dimensions (unit : mm) ? structure ultra fast recovery ? applications general rectification ? features 1)cathode common single type.(to-220) 2)ultra high switching speed ? construction silicon epitaxial planer ? absolute maximum ratings (tc=25 ? c) symbol v rm v r io tj tstg ? electrical characteristics (tj=25 ? c) symbol unit forward voltage v f v i r a trr ns thermal resistance rth(j-c) ? c/w storage temperature ? 55 to ? 150 ? c junction temperature 150 ? c 530 530 a forward current surge peak i fsm 100 a average rectified forward current one cycle peak value, tj=25 ? c 60hz half sin wave, non-repetitive direct voltage repetitive peak reverse voltage duty ? 0.5 reverse voltage v parameter conditions min. typ. max. v 60hz half sin wave, resistance load, tc=95 ? c 20 i f =20a - 1.65 2 10 reverse recovery time i f =0.5a,i r =1a,irr=0.25i r -2330 reverse current v r =530v - 0.05 junction to case - - 1.8 parameter conditions limits unit (1) (2) (3) (1) (2) (3) 1/3 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rfu20tm5s ? electrical characteristic curves 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma i f =1a 300us time 1 10 100 1400 1500 1600 1700 1800 forward voltage : v f (mv) v f -i f characteristics forward current : i f (a) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map capacitance between terminals : ct(pf) ct dispersion map i fsm disresion map peak surge forward current : i fsm (a) peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current : i fsm (a) time : t(ms) i fsm -t characteristics time : t(s) rth-t characteristics trr dispersion map reverse recovery time : trr(ns) t =25 ? c v r =530v n=20pcs ave : 64.0na ave : 1567mv t =25 ? c i f =20a n=20pcs electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 100 0 500 1000 1500 2000 2500 3000 tj=125 ? c tj=25 ? c tj=150 ? c 1 10 100 1000 10000 100000 0 100 200 300 400 500 600 tj=125 ? c tj=25 ? c tj=150 ? c 10 15 20 25 30 35 40 ave : 22.7ns t =25 ? c i f =0.5a i r =1a irr=0.25*i r n=10pcs 10 100 1000 0 5 10 15 20 25 30 f=1mhz tj=25 ? c 350 370 390 410 430 450 ave : 419pf t =25 ? c f=1mhz v r =0v n=10pcs 100 150 200 250 300 ave : 231.0a 8.3ms i fsm 1cyc 10 100 1000 1 10 100 8.3ms i fsm 1cyc 8.3ms 10 100 1000 1 10 100 t i fsm 0 1 2 3 4 5 ave : 0.9kv ave : 2.32kv c=200pf r=0 ? c=100pf r=1.5k ? capacitance between terminals : ct(pf) transient thaermal impedance : rth ( ? c/w) 2/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rfu20tm5s 0 5 10 15 20 25 30 35 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 0 5 10 15 20 25 30 35 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d = 0.8 forward power dissipation : pf(w) average rectified forward current : io(a) io-pf characteristics ambient temperature : ta( ? c) derating curve"(io-ta) average rectified forward current : io(a) average rectified forward current : io(a) case temparature : tc( ? c) derating curve"(io-tc) t tj=150 ? c d=t/t t v r io v r =430v 0a 0v t tj=150 ? c d=t/t t v r io v r =430v 0a 0v 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 3/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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